vishay rg1a to rg1m document number 86074 rev. 2, 28-jan-03 vishay semiconductors www.vishay.com 1 17031 fast sinterglass diode \ features ? high temperature metallurgically bonded con- struction hermetically sealed package cavity-free glass passivated junction 1.0 ampere operation at t amb = 55 c with no ther- mal runaway fast switching for high efficiency mechanical data case: sintered glass case, jedec do-204ap terminals: solder plated axial leads, solderable per milstd- 750, method 2026 polarity: color band denotes cathode end mounting position: any weight: 560 mg parts table part type differentiation package rg1a v rrm = 50 v do-204ap ( g1) rg1b v rrm = 100 v do-204ap ( g1) rg1d v rrm = 200 v do-204ap ( g1) rg1g v rrm = 400 v do-204ap ( g1) rg1j v rrm = 600 v do-204ap ( g1) rg1k v rrm = 800 v do-204ap ( g1) rg1m v rrm = 1000 v do-204ap ( g1)
www.vishay.com 2 document number 86074 rev. 2, 28-jan-03 vishay rg1a to rg1m vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance t amb = 25 c, unless otherwise specified 1) thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, p.c.b. mounted electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics rg1a v r = v rrm 50 v see electrical characteristics rg1b v r = v rrm 100 v see electrical characteristics rg1d v r = v rrm 200 v see electrical characteristics rg1g v r = v rrm 400 v see electrical characteristics rg1j v r = v rrm 600 v see electrical characteristics rg1k v r = v rrm 800 v see electrical characteristics rg1m v r = v rrm 1000 v maximum average forward rectified current 0.375 " (9.5 mm) lead length at t amb = 55 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a maximum full load reverse current full cycle average 0.375 " (9.5 mm) lead length at t amb = 25 c i r(av) 1.0 a full cycle average 0.375 " (9.5 mm) lead length at t amb = 100 c i r(av) 100 a operating junction and storage temperature range t j , t stg - 55 to + 175 c parameter symbol value unit typical thermal resistance 1) r ja 55 k/w parameter test condition part symbol ty p. max unit maximum instantaneous forward voltage i f = 1 a v f 1.3 v reverse current v r = v rrm i r 2.0 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg1a t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg1b t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg1d t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg1g t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg1j t rr 200 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg1k t rr 250 ns i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a rg1m t rr 500 ns typical junction capacitance v r = 4.0 v, f = 1 mhz c j 15 pf
vishay rg1a to rg1m document number 86074 rev. 2, 28-jan-03 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. forward current derating curve figure 2. maximum non-repetitive peak forward surge current figure 3. typical instantaneous forward characteristics ambient temperature ( c) average forward rectified current (a) 0 25 50 75 100 125 175 0 0.2 0 .4 0.6 0.8 1.0 150 0.375" (9. 5mm ) lead length ipk/i av = i pk/i av = resist ive or inductive load capacitance load 5.0 10 20 grg1a_01 number of cycles at 60 h z peak forward surge current (a) 3 0 2 0 10 0 1 10 100 t a =25 c 8.3ms single half sine-wave (jedec method) grg1a_02 instantaneous forward voltage (v) instantaneous forward current (a) 20 1 0 1 0.1 0.0 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j =25 c pulse width = 300 s 1% duty cycle grg1a_03 figure 4. typical reve rse characteristics figure 5. typical junction capacitance percent of rated peak reverse voltage (%) instantaneous reverse current ( a) 0 2 0 4 0 6 0 8 0 1 00 0 .01 0 .1 1 10 20 t j =75 c t j =25 c t j =125 c grg1a_04 reverse voltage (v) junction capacitance (pf) 1 10 100 1 1 0 30 t j =25 c f = 1.0mh z vsig, 50mvp-p max. grg1a_05
www.vishay.com 4 document number 86074 rev. 2, 28-jan-03 vishay rg1a to rg1m vishay semiconductors package dimensions in inches (mm) 0.034 (0.86) 0.028 (0.71) dia. 0.150 (3.8) 0.100 (2.5) dia. 1.0 (25.4) min. 0.240 (6.1) max. 1.0 (25.4) min. 17030
vishay rg1a to rg1m document number 86074 rev. 2, 28-jan-03 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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